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THS9001
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SLOS426B - NOVEMBER 2003 - REVISED JANUARY 2007
50 MHz to 350 MHz CASCADEABLE AMPLIFIER
FEATURES
* High Dynamic Range - OIP3 = 36 dBm - NF < 4.5 dB Single Supply Voltage High Speed - VS = 3 V to 5 V - IS = Adjustable Input / Output Impedance - 50
APPLICATIONS
* IF Amplifier - TDMA: GSM, IS-136, EDGE/UWE-136 - CDMA: IS-95, UMTS, CDMA2000 - Wireless Local Loop - Wireless LAN: IEEE802.11
* *
*
DESCRIPTION
The THS9001 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier incorporates internal impedance matching to 50 , and achieves greater than 15-dB input, and output return loss from 50 MHz to 350 MHz with VS = 5 V, R(BIAS) = 237 , L(COL) = 470 nH. Design requires only 2 dc-blocking capacitors, 1 power-supply bypass capacitor, 1 RF choke, and 1 bias resistor. Functional Block Diagram
VS THS9001 IF(IN) CIN 2 5 COUT 3 4 L(COL) C(BYP) IF(OUT) 1 6 R(BIAS)
VS
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright (c) 2003-2007, Texas Instruments Incorporated
THS9001
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SLOS426B - NOVEMBER 2003 - REVISED JANUARY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICES (1) THS9001DBVT THS9001DBVR (1) PACKAGE TYPE SOT-23-6 TRANSPORT MEDIA, QUANTITY Tape and Reel, 250 Tape and Reel, 3000
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature (unless otherwise noted) (1)
UNIT VSS VI Supply voltage, GND to VS Input voltage Continuous power dissipation TJ TJ Tstg Maximum junction temperature Maximum junction temperature, continuous operation, long term reliability Storage temperature HBM ESD Ratings CDM MM (1) (2)
(2)
5.5 V GND to VS See Dissipation Ratings Table 150C 125C -65C to 150C 2000 1500 100
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
PACKAGE DBV (2) (1) (2) JC (C/W) 70.1 JA (C/W) 216 POWER RATING (1) TA 25C 463 mW TA = 85C 185 mW
Power rating is determined with a junction temperature of 125C. Thermal management of the final PCB should strive to keep the junction temperature at or below 125C for best performance. This data was taken using the JEDEC standard High-K test PCB.
RECOMMENDED OPERATING CONDITIONS
MIN VSS TA IS Supply voltage Operating free-air temperature, Supply current 2.7 -40 100 NOM MAX 5 85 UNIT V C mA
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ELECTRICAL CHARACTERISTICS
Typical Performance (VS = 5 V, R(BIAS) = 237 , L(COL) = 470 nH) (unless otherwise noted)
PARAMETER Gain OIP3 1-dB compression Input return loss Output return loss Reverse isolation Noise figure TEST CONDITIONS f = 50 MHz f = 350 MHz f = 50 MHz f = 350 MHz f = 50 MHz f = 350 MHz f = 50 MHz f = 350 MHz f = 50 MHz f = 350 MHz f = 50 MHz f = 350 MHz f = 50 MHz f = 350 MHz MIN TYP 15.8 15.0 35 37 20.6 20.6 15.4 16.6 17 15 20.7 20.7 3.7 4 MAX UNITS dB dBm dBm dB dB dB dB
PIN ASSIGNMENT
IF(IN) 1 6 BIAS
GND
2
5
IF(OUT)
VS
3
4
L(COL)
Terminal Functions
Pin Numbers 1 2 3 4 5 6 Name IF(IN) GND VS L(COL) IF(OUT) BIAS Description Signal input Negative power supply input Positive power supply input Output transistor load inductor Signal output Bias current input
SIMPLIFIED SCHEMATIC
VS L(COL)
Bias IF(IN) IF(OUT)
GND
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THS9001
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TYPICAL CHARACTERISTICS TABLE OF GRAPHS
FIGURE S21 Frequency response S22 Frequency response S11 Frequency response S12 Frequency response S21 Noise figure IS Supply current Output power Adjacent channel (ACPR) and Alternate channel (AltCPR) protection ratios OIP2 OIP3 S21 Frequency response S22 Frequency response S11 Frequency response S12 Frequency response Noise figure OIP2 Output power OIP3 vs Frequency vs Input power vs Frequency vs Frequency vs R(Bias) vs Frequency vs R(Bias) vs Input power vs Input power vs Frequency vs Frequency 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
4
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S-Parameters of THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 , and L(COL) = 68 nH to 470 nH at room temperature.
S21 FREQUENCY RESPONSE
17 L(COL) = 470 nH 16 15 S21 - dB 14 S22 - dB L(COL) = 330 nH -5 L(COL) = 220 nH 0
S22 FREQUENCY RESPONSE
L(COL) = 100 nH VS = 5 V, R(BIAS) = 237W, L(COL) = 68 nH
-10 L(COL) = 220 nH -15 L(COL) = 330 nH L(COL) = 470 nH -20 1M 10 M 100 M 1G
13 12
L(COL) = 100 nH L(COL) = 68 nH
11 10
VS = 5 V, R(BIAS) = 237W, 1M 10 M 100 M 1G
f - Frequency - Hz
f - Frequency - Hz
Figure 1. S11 FREQUENCY RESPONSE
0 -5 -10 -15 -20 -25 -30 -35 -35 -40 1M 10 M 100 M f - Frequency - Hz 1G VS = 5 V, R(BIAS) = 237W, -40 1M L(COL) = 100 nH L(COL) = 220 nH L(COL) = 330 nH L(COL) = 470 nH S12 - dB -25 L(COL) = 68 nH -15
Figure 2. S12 FREQUENCY RESPONSE
VS = 5 V, R(BIAS) = 237W L(COL) = 470 nH -20 L(COL) = 330 nH
S11 - dB
L(COL) = 220 nH -30 L(COL) = 100 nH L(COL) = 68 nH
10 M
100 M
1G
f - Frequency - Hz
Figure 3.
Figure 4.
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S-Parameters of THS9001 as mounted on the EVM with VS = 3 V and 5 V, R(BIAS) = various, and L(COL) = 470 nH at room temp.
S21 vs R(BIAS)
17 R(BIAS) = 56.2 W, VS = 3 V 16 15 14 13 12 R(BIAS) = 174 W, VS = 3 V 11 VS = 3 V to 5 V, L(col) = 470 nH 10 1M 10 M 100 M f - Frequency - Hz 1G 3.5 3.25 3 50 4.75 VS = 5 V, IS = 99 mA 4.5 Noise Figure - dB R(BIAS) = 237 W, VS = 5 V R(BIAS) = 97.7W, VS = 3 V R(BIAS) = 340 W, VS = 5 V R(BIAS) = 549 W VS = 5 V 4.25 4 3.75 VS = 3 V, IS = 49 mA VS = 3 V, IS = 70 mA VS = 5 V, IS = 75 mA VS = 3 V, IS = 94 mA VS = 5 V, IS = 50 mA 5
NOISE FIGURE vs FREQUENCY
S21 - dB
150
250
350
450
500
f - Frequency - MHz
Figure 5. SUPPLY CURRENT vs R(BIAS)
200 180 PO - Output Power - dBm 160 I S - Supply Current - mA 140 120 VS = 5 V 100 80 60 40 11 20 50 150 250 350 R(BIAS) - W 450 550 10 -6 -4 -2 VS = 3 V 22 21 20 19 18 17 16 15 14 13 12
Figure 6. OUTPUT POWER vs INPUT POWER
VS = 5 V, IS = 99 mA VS = 5 V, IS = 75 mA
VS = 5 V, IS = 50 mA
VS = 3 V, IS = 94 mA VS = 3 V, IS = 70 mA
VS = 3 V, IS = 49 mA f = 100 MHz 0 2 4 6 8 PI - Input Power - dBm 10 12 14
Figure 7.
Figure 8.
6
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ADJACENT CHANNEL (ACPR) and ALTERNATE CHANNEL (AltCPR) PROTECTION RATIOS vs INPUT POWER WCDMA Modulation, f = 184.32 MHz, PAR = 10.4 dB
-20 VS = 5 V IS = 99 mA L(col) = 220 nH
ACPR
OIP2 vs FREQUENCY
50 L(COL) = 470 nH 48 46 VS = 3 V, IS = 94 mA VS = 5 V, IS = 99 mA
-30
Power Ratio - dB
-40
AltCPR
-50
OIP2 - dBm
44 42 40 VS = 5 V, IS = 75 mA VS = 3 V, IS = 70 mA
-60
Source ACPR
38
-70
Source AltCPR
36 34
VS = 3 V, IS = 49 mA 0 50 100
-80 -21
VS = 5 V, IS = 50 mA 250 300
-18
-15
-12
-9
-6
-3
0
3
Input Power - dBM
150 200 f - Frequency - MHz
Figure 9. OIP3 vs FREQUENCY
40 38 36 OIP3 - dBm 34 32 VS = 5 V, IS = 50 mA 30 28 VS = 3 V, IS = 49 mA 26 24 0 VS = 3 V, IS = 94 mA VS = 3 V, IS = 70 mA L(COL) = 470 nH VS = 5 V, IS = 99 mA
Figure 10.
VS = 5 V, IS = 75 mA
100
200
300
400
500
f - Frequency - MHz
Figure 11.
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THS9001
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THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 , and L(COL) = 470 nH at 40C, 25C, and 85C.
S21 FREQUENCY RESPONSE
17 -455C 16 255C 15 S21 - dB 14 13 12 VS = 5 V, R(BIAS) = 237 W, L(col) = 470 nH 1M 10 M 100 M 1G 855C S22 - dB -4 -6 -8 -10 855C -12 -14 -16 11 10 -18 -20 1M 10 M 100 M 1G f - Frequency - Hz -455C 255C 0 -2 VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH
S22 FREQUENCY RESPONSE
f - Frequency - Hz
Figure 12. S11 FREQUENCY RESPONSE
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 1M 10 M 100 M 1G f - Frequency - MHz -455C 255C -40 1M -35 855C S12 - dB -25 VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH -15 VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH -20
Figure 13. S12 FREQUENCY RESPONSE
-455C 255C 855C -30
S11 - dB
10 M
100 M
1G
f - Frequency - Hz
Figure 14.
Figure 15.
8
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NOISE FIGURE vs FREQUENCY
6 VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH 48 47 855C 46 Noise Figure - dB OIP2 - dBm 5 45 44 43 4 42 3.5 -455C 41 40 50
OIP2 vs FREQUENCY
VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH
-455C
5.5
255C 855C
4.5
255C
3
0
100
200
300
400
500
100
150
200
250
300
f - Frequency - MHz
f - Frequency - MHz
Figure 16. OUTPUT POWER vs INPUT POWER
22 21 PO - Output Power - dBm 20 19 18 17 16 15 14 -2 855C VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH f = 100 MHz 255C 39 -455C OIP3 - dBm 38 40 VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH
Figure 17. OIP3 vs FREQUENCY
855C 255C 37 36 35 34 33 32 50 -455C
0
2 4 6 8 PI - Input Power - dBm
10
12
100
150 200
250 300 350 400 450 500
f - Frequency - MHz
Figure 18.
Figure 19.
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THS9001
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TYPICAL CHARACTERISTICS
S-Parameters Tables of THS9001 with EVM De-Embedded
VS = 5 V, R(BIAS) = 237 , L(COL) = 470 nH S21 Frequency (MHz) 1.0 5.0 10.2 19.7 50.1 69.7 102.4 150.5 198.1 246.9 307.6 362.8 405.0 452.2 504.7 563.4 595.3 664.5 702.1 741.8 828.1 874.9 924.4 976.7 1031.9 1090.3 1151.9 1217.1 1285.9 1358.6 1435.5 1516.6 1602.4 1693.0 1788.8 1889.9 1996.8 Gain (dB) -3.5 11.7 15.8 16.3 15.9 15.8 15.7 15.6 15.5 15.3 15.2 15.0 14.9 14.7 14.5 14.4 14.2 14.1 14.0 13.9 13.5 13.0 12.8 11.6 11.1 10.4 10.3 9.7 8.6 7.3 5.8 4.6 3.2 1.5 -0.5 -2.5 -4.1 Phase (deg) -165.0 -127.1 -150.1 -170.8 175.7 171.5 165.7 158.2 151.1 144.1 135.3 127.8 121.9 115.4 108.4 100.3 96.0 87.0 80.9 76.5 62.2 54.0 44.9 35.9 33.0 29.2 22.2 4.7 0.7 -8.3 -14.5 -22.7 -28.4 -38.0 -47.9 -51.0 -49.0 Gain (dB) -2.3 -1.5 -2.2 -6.6 -16.2 -21.1 -32.3 -28.0 -21.9 -18.9 -16.0 -14.2 -12.8 -11.6 -10.3 -8.9 -8.2 -6.7 -5.9 -5.1 -4.3 -4.1 -3.6 -3.5 -3.4 -3.3 -3.0 -2.9 -2.9 -2.9 -3.0 -3.1 -3.1 -3.1 -3.1 -3.2 -3.4 S11 Phase (deg) -1.1 -14.9 -42.3 -69.3 -90.3 -95.4 -86.5 45.9 46.8 37.2 27.8 17.4 10.9 3.0 -6.0 -17.4 -23.3 -36.9 -44.6 -54.0 -76.1 -84.6 -93.1 -104.4 -115.7 -122.0 -131.3 -142.3 -151.7 -161.2 -170.1 -178.6 173.2 165.1 157.6 148.8 139.5 Gain (dB) -2.6 -2.8 -5.3 -10.7 -16.2 -16.9 -17.1 -16.8 -16.2 -15.3 -14.2 -13.3 -12.6 -11.8 -10.9 -9.8 -9.2 -8.0 -7.3 -6.8 -6.3 -5.9 -5.1 -5.3 -5.8 -5.7 -4.8 -3.9 -3.6 -3.4 -3.2 -3.2 -3.1 -3.0 -2.9 -2.7 -2.3 S22 Phase (deg) 174.8 140.4 99.8 64.5 33.9 26.4 19.9 14.7 10.8 6.0 -1.8 -9.2 -16.0 -23.9 -33.0 -45.2 -52.2 -68.3 -79.1 -91.4 -113.2 -126.0 -136.8 -157.8 -172.3 -173.4 179.4 161.9 147.6 134.6 122.6 112.1 101.7 92.4 83.6 74.4 65.0 Gain (dB) -64.4 -32.4 -23.6 -21.1 -20.6 -20.6 -20.6 -20.7 -20.7 -20.7 -20.6 -20.6 -20.6 -20.6 -20.7 -20.9 -21.0 -21.7 -22.5 -24.0 -26.5 -27.0 -28.0 -34.0 -37.1 -37.8 -31.1 -26.3 -22.7 -20.6 -18.8 -17.2 -15.7 -14.3 -13.1 -12.4 -12.2 S12 Phase (deg) -121.7 123.0 79.5 40.7 14.5 9.4 5.3 2.1 0.1 -1.4 -3.9 -5.9 -8.2 -10.8 -14.2 -19.3 -22.6 -30.5 -38.6 -44.9 -35.0 -49.0 -62.9 -104.4 107.9 162.5 169.5 137.1 121.9 116.5 105.2 96.0 87.0 79.2 68.8 56.9 48.2
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APPLICATION INFORMATION
The THS9001 is a medium power, cascadeable, amplifier optimized for high intermediate frequencies in radios. The amplifier is unconditionally stable and design requires only 2 dc-blocking capacitors, 1 power-supply bypass capacitor, 1 RF choke, and 1 bias resistor. Refer to Figure 25 for circuit diagram. The THS9001 operates with a power supply voltage ranging from 2.5 V to 5.5 V. The value of R(BIAS) sets the bias current to the amplifier. Refer to Figure 7. This allows the designer to trade-off linearity versus power consumption. R(BIAS) can be removed without damage to the device. Component selection of C(BYP), CIN, and COUT is not critical. The values shown in Figure 25 were used for all the data shown in this data sheet. The amplifier incorporates internal impedance matching to 50 that can be adjusted for various frequencies of operation by proper selection of L(COL). Figure 20 shows the s-parameters of the part mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 , and L(COL) = 470 nH. With this configuration, the part is very broadband, and achieves greater than 15-dB input and output return loss from 50 MHz to 325 MHz.
17 16 15 S21 - dB 14 -15 13 S12 12 -25 -20 S22 S11 VS = 5 V, R(BIAS) = 237 W, L(COL) = 470 nH S21 S11, S12, S22 - dB -10 0
-5
11 10 1M 10 M 100 M 1G f - Frequency - Hz
-30
Figure 20. S-Parameters of THS9001 Mounted on the Standard EVM With VS = 5 V, R(BIAS) = 237 , and L(COL) = 470 nH
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APPLICATION INFORMATION (continued)
Figure 21 Shows an example of a single conversion receiver architecture and where the THS9001 would typically be used.
900 MHz - 2 GHz Image Rejection Filter LNA 1 LNA 2 Mixer IF Amp 1 IF SAW PGA IF SAW 900 MHz - 2 GHz IF Amp 2 ADC
RX LO
LO Drive Amp 1
LO Drive Amp 2 THS9001 2x for Diversity
Figure 21. Example Single Conversion Receiver Architecture Figure 22 shows an example of a dual conversion receiver architecture and where the THS9001 would typically be used.
900 MHz - 2 GHz 100 MHz - 300 MHz 1st IF Amp Image Reject Filter 1st Mixer 1st IF SAW PGA LNA 2 20 MHz - 70 MHz 2nd IF Amp1 2nd Mixer 2nd IF SAW 2nd IF Amp2 Alias Filter ADC
LNA 1
LO1 Drive LO1 Drive Amp 2 RX LO 1 Amp 1
RX LO2
LO2 Drive LO2 Drive Amp 1 Amp 2
THS9001 2x for Diversity
Figure 22. Example Dual Conversion Receiver Architecture Figure 23 shows an example of a dual conversion transmitter architecture and where the THS9001 would typically be used.
BB 100 MHz - 300 MHz 1st IF amp DAC BB Amp Alias Filter 1st Mixer IF SAW PGA 2nd Mixer PA 900 MHz - 2 GHz
RX LO1
LO1 Drive LO1 Drive Amp 2 Amp 1
RX LO2
LO2 Drive LO2 Drive Amp 2 Amp 1
THS9001 2x for Diversity
Figure 23. Example Dual Conversion Transmitter Architecture
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APPLICATION INFORMATION (continued)
Figure 24 shows the THS9001 and Sawtek #854916 SAW filter frequency response along with the frequency response of the SAW filter alone. The SAW filter has a center frequency of 140 MHz with 10-MHz bandwidth and 8-dB insertion loss. It can be seen that the frequency response with the THS9001 is the same as with the SAW except for a 15-dB gain. The THS9001 is mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 , and L(COL) = 470 nH. Note the amplifier does not add artifacts to the signal.
SAW + THS90001
SAW RED =
THS9001
SAW Only GREEN =
SAW 140 MHz
140 MHz SAW: Sawtek #854916
Figure 24. Frequency Response of the THS9001 and SAW Filter, and SAW Filter Only
VS THS9001 IF(IN) CIN 1 nF 2 5 COUT 1 nF 3 4 L(COL) C(BYP) 0.1 mF IF(QUT) 1 6 R(BIAS)
VS
Figure 25. THS9001 Recommended Circuit (Used for all Tests)
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APPLICATION INFORMATION (continued) Evaluation Module
Table 1 is the bill of materials, and Figure 26 and Figure 27 show the EVM layout. Bill Of Materials
ITEM 1 2 3 4 5 6 7 8 9 10 11 (1) DESCRIPTION Cap, 0.1 F, ceramic, X7R, 50 V Cap, 1000 pF, ceramic, NPO, 100 V Inductor, 470 nH, 5% Resistor, 237 , 1/8 W, 1% Open Jack, banana receptance, 0.25" dia. Connector, edge, SMA PCB jack Standoff, 4-40 Hex, 0.625" Length Screw, Phillips, 4-40, .250" IC, THS9001 Board, printed-circuit U1 REF DES C1 C2, C3 L1 R1 TR1 J3, J4 J1, J2 QTY 1 2 1 1 1 2 2 4 4 1 1 (SPC) 813 (Johnson) 142-0701-801 (KEYSTONE) 1808 SHR-0440-016-SN (TI) THS9001DBV (TI) EDGE # 6453522 Rev.A PART NUMBER (1) (AVX) 08055C104KAT2A (AVX) 08051A102JAT2A (Coilcraft) 0805CS-471XJBC (Phycomp) 9C08052A2370FKHFT
The manufacturer's part numbers are used for test purposes only.
Figure 26. EVM Top Layout
Figure 27. EVM Bottom Layout
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0.085 0.053 0.008 Pin 1
0.040 0.032
0.032
Top View
Figure 28. THS9001 Recommended Footprint (dimensions in inches)
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device THS9001DBVR THS9001DBVRG4 THS9001DBVT THS9001DBVTG4
(1)
Status (1) ACTIVE ACTIVE ACTIVE ACTIVE
Package Type SOT-23 SOT-23 SOT-23 SOT-23
Package Drawing DBV DBV DBV DBV
Pins Package Eco Plan (2) Qty 6 6 6 6 3000 Green (RoHS & no Sb/Br) 3000 Green (RoHS & no Sb/Br) 250 250 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br)
Lead/Ball Finish CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU
MSL Peak Temp (3) Level-1-260C-UNLIM Level-1-260C-UNLIM Level-1-260C-UNLIM Level-1-260C-UNLIM
The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
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TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins Type Drawing SOT-23 SOT-23 DBV DBV 6 6
SPQ
Reel Reel Diameter Width (mm) W1 (mm) 180.0 180.0 9.0 9.0
A0 (mm)
B0 (mm)
K0 (mm)
P1 (mm) 4.0 4.0
W Pin1 (mm) Quadrant 8.0 8.0 Q3 Q3
THS9001DBVR THS9001DBVT
3000 250
3.15 3.15
3.2 3.2
1.4 1.4
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
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11-Mar-2008
*All dimensions are nominal
Device THS9001DBVR THS9001DBVT
Package Type SOT-23 SOT-23
Package Drawing DBV DBV
Pins 6 6
SPQ 3000 250
Length (mm) 182.0 182.0
Width (mm) 182.0 182.0
Height (mm) 20.0 20.0
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IMPORTANT NOTICE
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